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RFHA1006 Datasheet, RF Micro Devices

RFHA1006 amplifier equivalent, 9w gan wideband power amplifier.

RFHA1006 Avg. rating / M : 1.0 rating-12

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RFHA1006 Datasheet

Features and benefits


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* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internal.

Application

such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power d.

Description

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor proc.

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TAGS

RFHA1006
GaN
WIDEBAND
POWER
AMPLIFIER
RFHA1000
RFHA1003
RFHA1020
RF Micro Devices

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